Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO2 using parametric models

Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO2 using parametric models

Large melting-point hysteresis of Ge nanocrystals embedded in SiO2.

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

Amorphization of Ge and Si nanocrystals embedded in amorphous SiO2 by ion irradiation

M. Backman,1 F. Djurabekova,1,2,* O. H. Pakarinen,1 K. Nordlund,1 L. L. Araujo,3 and M. C. Ridgway3 1Helsinki Institute of Physics and Department of Physics, University of Helsinki, P.O. Box 43, Helsinki FI-00014, Finland 2Arifov Institute of Electronics, Durmon yuli 33, 100125 Tashkent, Uzbekistan 3Department of Electronic Materials Engineering, Research School of Physical Sciences and Enginee...

Ultraviolet and blue photoluminescence from sputter deposited Ge nanocrystals embedded in SiO2 matrix

Ge nanocrystals embedded in SiO2 matrix P. K. Giri, S. Bhattacharyya, Satchi Kumari, Kaustuv Das, S. K. Ray, B. K. Panigrahi, and K. G. M. Nair Department of Physics and Centre for Nanotechnology, Indian Institute of Technology, Guwahati 781039, India Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721302, India Materials Science Division, Indira Gandhi Center f...

Instability in flatband voltage of SiO2 embedded with silicon nanocrystals

In this work, the flatband voltage shift of SiO2 embedded with silicon nanocrystal (nc-Si) annealed at different annealing temperature, different annealing time and under different temperature ramping rates are being investigated. The Si-ions are implanted into the SiO2 with very low energy. The instability of the flatband voltage shift is due to fact that there are remaining Si ions in the SiO...